Coupled Lorenz systems, cusp maps, and the lowering of the second laser thresholdLAWANDY, N. M; PLANT, D. V; LEE, K et al.Physical review. A, General physics. 1986, Vol 34, Num 2, pp 1247-1250, issn 0556-2791Article

Characteristics of electrons at the trapping boundary of the radiation beltIMHOF, W. L; CHENETTE, D. L; GAINES, E. E et al.Journal of geophysical research. 1997, Vol 102, Num A1, pp 95-104, issn 0148-0227Article

Band-structure engineering for low-threshold high-efficiency semiconductor lasersADAMS, A. R.Electronics Letters. 1986, Vol 22, Num 5, pp 249-250, issn 0013-5194Article

Review of methods for calculating near edge structureREZ, P; BRULEY, J; BROHAN, P et al.Ultramicroscopy. 1995, Vol 59, Num 1-4, pp 159-167, issn 0304-3991Conference Paper

Moiré modulation transfer function of alexandrite rods and their thresholds as lasersKAFRI, O; SAMELSON, H; CHIN, T et al.Optics letters. 1986, Vol 11, Num 4, pp 201-203, issn 0146-9592Article

The anisotropy of the threshold energy for atom displacements in silverSIGLE, W.Journal of physics. Condensed matter (Print). 1991, Vol 3, Num 22, pp 3921-3928, issn 0953-8984Article

Analysis of the spectrum behavior below the threshold in DFB lasersSODA, H; IMAI, H.IEEE journal of quantum electronics. 1986, Vol 22, Num 5, pp 637-641, issn 0018-9197Article

Asymmetric noise and output power in semiconductor lasers with optical feedback near thresholdMINK, J; VERBEEK, B. H.Applied physics letters. 1986, Vol 48, Num 12, pp 745-747, issn 0003-6951Article

Lateral current spreading in DH-lasers above thresholdVAN DE CAPELLE, J. P; VANKWIKELBERGE, P; BAETS, R et al.IEE proceedings. Part J. Optoelectronics. 1986, Vol 133, Num 2, pp 143-148, issn 0267-3932Article

Energy threshold behaviour of electron induced MIM switchingBERG, F; PAGNIA, H; SOTNIK, N et al.Physica status solidi. A. Applied research. 1986, Vol 95, Num 1, pp K91-K94, issn 0031-8965Article

Low-threshold two-dimensional distributed bragg reflector lasersNIGAMI, T; SUEMUNE, I; KAN, Y et al.Electronics Letters. 1986, Vol 22, Num 8, pp 427-428, issn 0013-5194Article

Caractéristiques de seuil du laser à injection à une seule hétérojonction faiblement dopéeGEL'MONT, B. L; ELYUKIN, V. A; ZEGRYA, G. G et al.Fizika i tehnika poluprovodnikov. 1986, Vol 20, Num 11, pp 2061-2064, issn 0015-3222Article

60 Hz ventricular fibrillation thresholds for large-surface-area electrodesROY, O. Z; SCOTT, J. R; TROLLOPE, B. J et al.Medical & biological engineering & computing. 1986, Vol 24, Num 5, pp 471-474, issn 0140-0118Article

Power thresholds of the L-H transition described by a global bifurcation of tokamak equilibriumMINARDI, E.Journal of plasma physics. 1997, Vol 57, pp 449-464, issn 0022-3778, 2Article

Reexamination of tests of the Wannier threshold law for two- electron escapeFRIEDMAN, J. R; GUO, X. Q; LUBELL, M. S et al.Physical review. A. 1992, Vol 46, Num 1, pp 652-655, issn 1050-2947Article

Conduction and scattering mechanisms in potential modulated inversion layersALMAGGOUSSI, A; SICART, J; ROBERT, J. L et al.Journal of applied physics. 1991, Vol 69, Num 3, pp 1463-1468, issn 0021-8979Article

Threshold law for electron-atom impact ionization : towards the inside contribution of the Coulomb-dipole theoryTEMKIN, A.Journal of physics. B. Atomic, molecular and optical physics (Print). 1991, Vol 24, Num 8, pp 2147-2159, issn 0953-4075, 13 p.Article

Low threshold laser operation at room temperature in GaAs/(Al,Ga)As structures grown directly on (100)SiFISCHER, R; KOPP, W; MORKOC, H et al.Applied physics letters. 1986, Vol 48, Num 20, pp 1360-1361, issn 0003-6951Article

Low-threshold InGaAsP ridge-waveguide laser fabricated by a new contacting systemMÜLLER, G; HARTL, E; HONSBERG, M et al.Electronics Letters. 1986, Vol 22, Num 10, pp 526-528, issn 0013-5194Article

Reduction of lasing threshold current density by the lowering of valence band effective massYABLONOVITCH, E; KANE, E. O.Journal of lightwave technology. 1986, Vol 4, Num 5, pp 504-506, issn 0733-8724Article

Printing biological solutions through laser-induced forward transferDUOCASTELLA, M; FERNANDEZ-PRADAS, J. M; DOMINGUEZ, J et al.Applied physics. A, Materials science & processing (Print). 2008, Vol 93, Num 4, pp 941-945, issn 0947-8396, 5 p.Article

Unitary separation of threshold structures in a K matrixHATEGAN, C.Journal of physics. B. Atomic, molecular and optical physics (Print). 1989, Vol 22, Num 22, pp L621-L625, issn 0953-4075Article

Threshold behavior of short-channel LDD MOSFET'sWANG, C. T.I.E.E.E. transactions on electron devices. 1987, Vol 34, Num 2, pp 452-454, issn 0018-9383Article

Gain measurements in a pulsed Xe IV laserCHARI, R; CHAKRAPANI, G.Physica, B + C. 1986, Vol 138, Num 3, pp 344-346, issn 0378-4363Article

Individual differences in sensitivity to transient electrocutaneous stimulationLARKIN, W. D; REILLY, J. P; KITTLER, L. B et al.IEEE transactions on biomedical engineering. 1986, Vol 33, Num 5, pp 495-504, issn 0018-9294Article